Dr. techn. Dipl.-Ing. Werner Simbürger, Founder

RF Engineering

ESD

2009 : Co-founder of the High Power Pulse Instruments GmbH
Since 11/2008 : Infineon Discrete Semiconductor Division, RF and ESD R&D
04/2007 – 10/2008 : Infineon Automotive Power Semiconductor Division, ESD product support
10/2005 – 03/2007 : Infineon Wireless Communications Division, RF-CMOS SoC PA product development
1999 – 09/2005 : Infineon Corporate Research, Head of High Frequency Research Department. Integrated circuit design in advanced Si/SiGe bipolar, CMOS, DRAM technologies for communications and automotive applications at 1-100 GHz,Gb/s
2003 – 2005 : European Commission Expert for funding project review at DG Information Society, Unit E6 Microelectronics – Optoelectronics, Brussels
2003 : Technical programme committee associate member of the IEEE International Electron Devices Meeting (IEDM), special topic session on RF CMOS, Washington, USA.
2001 – 2002 : Technical programme committee member of the IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, USA
2000 – 2005 : Technical programme committee member of the European Solid-State Circuits Conference (ESSCIRC).
1995 – 1999 : Technical staff member at SIEMENS AG, Corporate Technology Dept., Microelectronics. Integrated RF circuit design in Si/SiGe-Bipolar, CMOS technology for mobile communications
1995 : PhD degree (Dr. techn.) in Electrical Engineering, Technical University of Vienna, Austria. Integrated Single-Chip Direct Conversion RF-Transceiver
1991 – 1995 : Research assistant at the Institute for Communications and Radio Frequency Engineering, Technical University Vienna, Austria. Research on wireless communications.
1991 – 1993 : Freelance designer at the Institute for Combustion Engine Engineering, Technical University of Vienna, Austria. Lambda-measurement electronics for combustion engines
1992 : Dipl.-Ing. degree in Electrical Engineering, Technical University of Vienna, Austria. Baseband Signal Processing for Homodyne Receivers
1985 – 1991 : Freelance designer at Breitenbach & Heller GmbH, Vienna, Austria. Industrial electronics, control engineering and analog/digital signal processing

List of Publications

Y. Cao, W. Simbürger, and D. Johnsson, “Rise-Time Filter Design for Transmission-Line Pulse Measurement Systems”, in German Microwave Conference, pp. 1–5. IEEE, 16-18 March 2009.

V. Issakov, H. Knapp, M.Wojnowski, A. Thiede, W. Simbürger, G. Haider, and L. Maurer, “ESD-protected 24 GHz LNA for Radar Applications in SiGe:C Technology”, in 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), San Diego/USA, January 2009. IEEE.

V. Issakov, D. Johnsson, Yiqun Cao, M. Tiebout, M. Mayerhofer, W. Simbürger, and L. Maurer, “ESD Concept for High-Frequency Circuits”, in 30th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD, pp. 221–227, 7-11 September 2008.

V. Issakov, A. Thiede, M. Wojnowski, K. Buyuktas, and W. Simbürger, “Fast Analytical Parameters Fitting of Planar Spiral Inductors”, in International Conference on Microwaves, Communications, Antennas and Electronic Systems COMCAS, pp. 1–10. IEEE, 13-14 May 2008, invited.

V. Issakov, M. Tiebout, Y. Cao, A. Thiede, and W. Simbürger, “A low power 24 GHz LNA in 0.13 µm CMOS”, in International Conference on Microwaves, Communications, Antennas and Electronic Systems COMCAS, pp. 1–10. IEEE, 13-14 May 2008, invited.

S. Trotta, H. Knapp, K. Aufinger, T.F. Meister, J. Böck, B. Dehlink, W. Simbürger, and A.L. Scholtz, “An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology”, Journal of Solid-State Circuits JSSC, vol. 42, pp. 2099 – 2106, October 2007.

C. Grewing, S. van Waasen, B. Bokinge, W. Einerman, A. Emericks, R. Engberg, C. Hedenäs, H. Hellberg, M. Hjelm, S. Irmscher, T. Johansson, A.-M. Lann, M. Lewis, B. Li, O. Pettersson, W. Simbürger, D. Theil, and R. Thüringer, “CMOS Radio with an Integrated 26 dBm Power Amplifier for a Complete System-on-Chip Cordless Phone”, in Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 93 – 96. IEEE, 3-5. June 2007.

S. Trotta, H. Knapp, K. Aufinger, T.F. Meister, J. Böck, W. Simbürger, A.L. Scholtz, S. Trotta, B. Dehlink, H. Knapp, K. Aufinger, T.F. Meister, J. Böck, W. Simbürger, and A.L. Scholtz, “SiGe Circuits for Spread Spectrum Automotive Radar”, in International Conference on Ultra-Wideband ICUWB, pp. 523 – 528. IEEE, September 2007.

S. Trotta, H. Knapp, K. Aufinger, T.F. Meister, J. Böck, W. Simbürger, and A.L. Scholtz, “A Fundamental VCO with Integrated Output Buffer beyond 120 GHz in SiGe Bipolar Technology”, in International Microwave Symposium MTT-S, pp. 645 – 648. IEEE, June 2007.

S. Trotta, B. Dehlink, H. Knapp, K. Aufinger, T.F. Meister, J. Böck, W. Simbürger, and A.L. Scholtz, “Design Considerations for Low-Noise, Highly-Linear Millimeter-Wave Mixers in SiGe Bipolar Technology”, in 33rd European Solid State Circuits Conference, ESSCIRC, pp. 356 – 359. IEEE, September 2007.

M. Augustyniak, W. Weber, G. Beer, H. Mulatz, L. Elbrecht, H.-J. Timme, M. Tiebout, W. Simbürger, C. Paulus, B. Eversmann, D. Schmitt-Landsiedel, R. Thewes, and R. Brederlow, “An Integrated Gravimetric FBAR Circuit for Operation in Liquids Using a Flip-Chip Extended 0.13 µm CMOS Technology”, in Solid-State Circuits Conference ISSCC, pp. 392 – 610. IEEE, February 2007.

S. Trotta, H. Knapp, D. Dibra, K. Aufinger, T.F. Meister, J. Böck, W. Simbürger, and A.L. Scholtz, “A 79 GHz SiGe- Bipolar Spread-Spectrum TX for Automotive Radar”, in International Solid-State Circuits Conference ISSCC. IEEE, February 2007.

S. Trotta, H. Knapp, T.F. Meister, K. Aufinger, J. Böck, B. Dehlink, W. Simbürger, and A.L. Scholtz, “A New Regenerative Divider by Four up to 160 GHz in SiGe Bipolar Technology”, in International Microwave Symposium (IMS), pp. 1709 – 1712. IEEE, 11 Jun-16 Jun 2006.

M. Berry, C. Kienmayer, R. Thüringer, W. Simbürger, and W. Menzel, “Integrated RF Front-End in 0.13 µm CMOS for Automotive and Industrial Applications beyond 20 GHz”, in Solid-State Circuits Conference, ESSCIRC, pp. 392 – 395, September 2006.

S. Trotta, H. Knapp, K. Aufinger, T.F. Meister, J. Bock, W. Simbürger, and A.L. Scholtz, “A 84 GHz bandwidth and 20 dB gain broadband amplifier in SiGe bipolar technology”, in Compound Semiconductor Integrated Circuit Symposium, pp. 21–24. IEEE, November 2006.

A. Vasylyev, P. Weger, W. Bakalski, W., and W. Simbürger, “17-GHz 50-60 mW Power Amplifiers in 0.13-µm Standard CMOS”, IEEE Microwave and Wireless Components Letters,, vol. 16, pp. 37–39, January 2006.

M. Engl, K. Pressel, H. Theuss, J. Dangelmaier, W. Eurskens, H. Knapp, W. Simbürger, and R. Weigel, “Evaluation of Wirebond and Flip-Chip Interconnects of a Leadless Plastic Package for RF applications”, in 7th Electronic Packaging Technology Conference (EPTC), vol. 1, p. 5, 7-9 Dec. 2005.

A. Vasylyev, P. Weger, and W. Simbürger, “Ultra Broadband 20.5 – 31 GHz Monolithically Integrated CMOS Power Amplifier”, IEE Electronics Letters, vol. 41, pp. 1281–1282, 10 Nov. 2005.

A. Vasylyev, P. Weger, W. Bakalski, and W. Simbürger, “Fully-Integrated 32 dBm, 1.5-2.9 GHz SiGe-Bipolar Power Amplifier using Power-Combining Transformer”, IEE Electronics Letters, vol. 41, pp. 35–36, 04 August 2005.

W. Bakalski, A. Vasylyev, W. Simbürger, M. Kall, A. Schmid, and K. Kitlinski, “A 4.8-6GHz IEEE 802.11 a WLAN SiGe-Bipolar Power Amplifier with On-Chip Output Matching”, in Gallium Arsenide and Other Semiconductor Application Symposium (EGAAS), pp. 481–483, 3-4 Oct. 2005.

S. Trotta, H. Knapp, T.F. Meister, K. Aufinger, J. Böck, W. Simbürger, and A.L. Scholtz, “110-GHz Static Frequency Divider in SiGe Bipolar Technology”, in 27th IEEE Compound Semiconductor IC (CSIC) Symposium (formerly IEEE GaAs IC Symposium), 30 Oct-2 Nov 2005, late news paper.

A. Vasylyev, P. Weger, W. Bakalski, and W. Simbürger, “Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer”, IEE Electronics Letters, vol. 41, pp. 908–909, August 2005.

W. Simbürger, K. Aufinger, J. Böck, S. Boguth, D. Kehrer, C. Kienmayer, H. Knapp, T.F. Meister, W. Perndl, M. Rest, C. Sandner, H. Schäfer, R. Schreiter, R. Stengl, R. Thüringer, M. Tiebout, H.D. Wohlmuth, M. Wurzer, and A.L Scholtz, “High-Speed Analog and Digital IC’s: Research Results and Applications”, in German Microwave Conference GeMic, Ulm, Germany, 5-7 April 2005, invited.

W. Simbürger, K. Aufinger, J. Böck, S. Boguth, D. Kehrer, C. Kienmayer, H. Knapp, T.F. Meister, W. Perndl, M. Rest, C. Sandner, H. Schäfer, R. Schreiter, R. Stengl, R. Thüringer, M. Tiebout, H.D. Wohlmuth, M. Wurzer, and A.L Scholtz, “Silicon-based RF ICs up to 100 GHz: Research Trends and Applications”, in 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, October 18-21 2004, invited keynote.

W. Perndl, H. Knapp, K. Aufinger, T.F. Meister, W. Simbürger, and A.L. Scholtz, “Voltage-Controlled Oscillators up to 98 GHz in SiGe Bipolar Technology”, IEEE Journal of Solid-State Circuits, vol. 39, pp. 1773–1777, October 2004.

W. Perndl, W. Wilhelm, H. Knapp, M. Wurzer, K. Aufinger, T.F. Meister, J. Böck, W. Simbürger, and A.L. Scholtz, “A 60 GHz Broadband Amplifier in SiGe Bipolar Technology”, in Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 293–296, Montreal, Canada, Sept 13-14 2004.

A. Vasylyev, P. Weger, W. Bakalski, R. Thuringer, and W. Simbürger, “A Monolithic 2.4 GHz, 0.13 µm CMOS Power Amplifier with 28 dBm Output Power and 48 % PAE at 1.2 V Supply”, in 14th International Crimean Microwave and Telecommunication Technology Conference CriMico, pp. 98–99, 13-17 Sept. 2004.

W. Bakalski, W. Simbürger, R. Thüringer, A. Vasylyev, and A.L. Scholtz, “A Fully Integrated 5.3-GHz 2.4-V 0.3-W SiGe Bipolar Power Amplifier with 50-O Output”, IEEE Journal of Solid-State Circuits, vol. 39, pp. 1006–1014, July 2004.

C. Kienmayer, R. Thüringer, M. Tiebout, W. Simbürger, and A.L. Scholtz, “An Integrated 17 GHz Front-End for ISM/WLAN Applications in 0.13 µm CMOS”, in IEEE Symposium on VLSI Circuits, pp. 12–15, 17-19 June 2004.

M. Engl, K. Pressel, J. Dangelmaier, H. Theuss, B. Eisener, W. Eurskens, H. Knapp, W. Simbürger, and R. Weigel, “A 29 GHz Frequency Divider in a Miniaturized Leadless Flip-Chip Plastic Package”, in IEEE MTT-S International Microwave Symposium, vol. 2, pp. 477–480, 6-11 June 2004.

H. Theuss, J. Dangelmaier, M. Engl, K. Pressel, H. Knapp, W. Simbürger, K. Gnannt, W. Eurskens, J. Hirtreiter, and R. Weigel, “A Leadless Packaging Concept for High Frequency Applications”, in Electronic Components and Technology ECTC, vol. 2, pp. 1851–1854, 1-4 June 2004.

W. Perndl, H. Knapp, M. Wurzer, K. Aufinger, T. F. Meister, J. Böck, W. Simbürger, and A. L. Scholtz, “A Low-Noise and High-Gain Double-Balanced Mixer for 77 GHz Automotive Radar Front-Ends in SiGe Bipolar Technology”, in 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 47–50, 6-8 June 2004.

M. Engl, K. Pressel, H. Theuss, J. Dangelmaier, W. Eurskens, H. Knapp, W. Simbürger, and R. Weigel, “Evaluation of wirebond and flip-chip interconnects of a leadless plastic package for RF applications”, in Electronic Packaging Technology Conference, 2005, p. 5 pp., 7-9 Dec 2005.

C. Kienmayer, M. Tiebout, W. Simbürger, and A.L Scholtz, “A Low-Power Low-Voltage NMOS Bulk-Mixer with 20 GHz Bandwidth in 90 nm CMOS”, in IEEE International Symposium on Circuits and Systems ISCAS, vol. 4, pp. 385–8, 23-26 May 2004.

N. Ilkov, W. Bakalski, R. Matz, W. Simbürger, O. Dernovsek, and P.Weger, “A 5 to 6.5GHz LTCC Power Amplifier Module”, Advanced Microelectronics, vol. 31, pp. 7–9, March/April 2004.

R. Brederlow, S. Zauner, A.L. Scholtz, K. Aufinger, W. Simbürger, C. Paulus, A. Martin, M. Fritz, H.-J. Timme, H. Heiss, S. Marksteiner, L. Elbrecht, R. Aigner, and R. Thewes, “Biochemical Sensors Based on Bulk Acoustic Wave Resonatorse”, in IEEE International Electron Devices Meeting IEDM, pp. 32.7.1–32.7.3. IEEE, 8-10 Dec. 2003.

N. Ilkov, W. Bakalski, R. Matz, W. Simbürger, O. Dernovsek, and P.Weger, “A 5 to 6.5GHz LTCC Power Amplifier Module”, in 36th International Symposium on Microelectronics (IMAPS), Boston, MA, USA, 16-20. November 2003. IEEE.

H.D. Wohlmuth, D.Kehrer, M. Tiebout, H. Knapp, M.Wurzer, and W. Simbürger, “High Speed CMOS Circuits up to 40 Gb/s and 50 GHz”, in GaAs IC, San Diego, USA, November 2003. IEEE, invited.

W. Simbürger, D. Kehrer, M. Tiebout, H.D. Wohlmuth, H. Knapp, M. Wurzer, W. Perndl, M. Rest, C. Kienmayer, R. Thüringer, W. Bakalski, and A.L Scholtz, “CMOS and SiGe Bipolar Circuits for High-Speed Applications”, in Proc. of European Microwave Week 2003 EuMC, Munich, Germany, 6-10 October 2003, plenary talk.

W. Bakalski, W. Simbürger, R. Thüringer, A. Vasylyev, and A.L. Scholtz, “A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-Bipolar Power Amplifier with 50 O output”, in Proceedings of the 29th European Solid-State Circuit Conference, pp. 561–564, Estoril, Portugal, 16-18 September 2003. IEEE.

W. Bakalski, A. Vasylyev, W. Simbürger, R. Thüringer, H.D. Wohlmuth, A.L. Scholtz, and P. Weger, “A fully integrated 7-18GHz Power Amplifier with on-chip output balun in 75 GHz-fT SiGe-Bipolar”, in Bipolar/BiCMOS Circuits and Technology Meeting, pp. 61–64, Toulose, France, 28-30 September 2003. IEEE.

W. Perndl, H. Knapp, K. Aufinger, T.F. Meister, W. Simbürger, and A.L. Scholtz, “A 98 GHz Voltage Controlled Oscillator in SiGe Bipolar Technology”, in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, pp. 67–69, Toulose, France, 28-30 September 2003.

A.L. Scholtz, D. Kehrer, M. Tiebout, H.D. Wohlmuth, H. Knapp, M. Wurzer, W. Perndl, M. Rest, C. Kienmayer, R. Thüringer, W. Bakalski, and W. Simbürger, “CMOS and SiGe Bipolar Circuits for Applications up to 110 GHz”, e & i Elktrotechnik und Informationstechnik, vol. 9, pp. 271–275, September 2003.

D. Kehrer, G. Steinlesberger, K. Aufinger, H. Tischer, H.D.Wohlmuth, W. Simbürger, and A.L. Scholtz, “Prospects of Microstrip Waveguides in Aluminum and Copper Metallization for High-Frequency Applications”, Journal of the Brazilian Telecommunications Society, vol. 18, pp. 1–9, August 2003.

W. Bakalski, W. Simbürger, R. Thüringer, H.D. Wohlmuth, and A.L. Scholtz, “A fully integrated 4.8-6 GHz Power Amplifier with on-chip output balun in 38 GHz-fT Si-Bipolar”, in IEEE International Microwave Symposium, vol. 2, pp. 695 – 698, Philadelphia, 8-13 June 2003. IEEE.

R. Thüringer, M. Tiebout, W. Simbürger, C. Kienmayer, and A.L. Scholtz, “A 17 GHz Linear 50 O Output Driver in 0.12 µm Standard CMOS”, in IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers, pp. 207–210, Philadelphia, June 2003. RFIC.

H.D. Wohlmuth, D. Kehrer, M. Tiebout, H. Knapp, M. Wurzer, and W. Simbürger, “High Speed CMOS Circuits up to 40 Gb/s and 50 GHz”, in Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, pp. 31–34, 2003.

H.D. Wohlmuth, D. Kehrer, R. Thüringer, and W. Simbürger, “A 17 GHz Dual-Modulus Prescaler in 120 nm CMOS”, in Radio Frequency Integrated Circuits Symposium, pp. 479–482, Philadelphia,USA, June 2003. IEEE.

W. Simbürger, M. Tiebout, D. Kehrer, H.D. Wohlmuth, H. Knapp, M. Wurzer, and M. Rest, “Recent Advances in CMOS Circuits: Towards 40 Gb/s and 50 GHz”, in Proc. of IV. Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems SiRF, Garmisch, Germany, April 2003, invited paper.

W. Simbürger and I. Young, “Circuits in Emerging Technologies”, in IEEE International Solid-State Circuits Conference (ISSCC), 2003.

W. Bakalski, N. Ilkov, O. Dernovsek, R. Matz, W. Simbürger, P. Weger, and A.L. Scholtz, “A 5-6.5 GHz LTCC Power Amplifier Module with 0.3W at 2.4V in Si-bipolar”, IEE Electronics Letters, vol. 39, pp. 375–376, February 2003.

W. Bakalski, W. Simbürger, H. Knapp, and A.L. Scholtz, “Baluns für Mikrowellenanwendungen”, UKW-Berichte, vol. 1 and 2, pp. 51–57 and 77–85, 2002.

T. Liebermann, M. Tiebout, W. Simbürger, H.D. Wohlmuth, and A. Heinz, “A 0.9 V Low Voltage 0.13 W Power Amplifier with 37 % PAE at 1 GHz in Standard CMOS”, in Proc. of European Microwave Week, Paris, October 2000.

W. Bakalski, W. Simbürger, R. Thüringer, M. Rest, C. Ahrens, C. Kühn, and A.L. Scholtz, “A Monolithic 2.45 GHz Power Amplifier in SiGe-Bipolar with 0.4 W Output Power and 53 % PAE at 2 V”, in Proceedings of the 28th European Solid-state Circuit Conference, pp. 223–226, Firenze,Italy, 24-26 September 2002. IEEE.

D. Kehrer, J. Winkler, H. Tischer, H.-D. Wohlmuth, W. Simbürger, and A.L. Scholtz, “Characterization of Microstrip Waveguides in Silicon up to 80 GHz”, in International Telecommunications Symposium, p. CD ROM, Natal, Brasil, September 2002.

H.-D. Wohlmuth, D. Kehrer, and W. Simbürger, “A Static 4:1 Frequency Divider up to 16 GHz in 120 nm CMOS”, in International Telecommunications Symposium, p. CD ROM, Natal, Brasil, September 2002.

W. Bakalski, W. Simbürger, H. Knapp, and A.L. Scholtz, “Lumped and Distributed Lattice-type LC-Baluns”, in Proceedings of IEEE International Microwave Symposium, pp. 209–212, Seattle, 2-7 June 2002. IEEE.

H.-D. Wohlmuth, D. Kehrer, and W. Simbürger, “A High Sensitivity Static 2:1 Frequency Divider up to 19 GHz in 120 nm CMOS”, in Radio Frequency Integrated Circuits Symposium, pp. 231–234, Seattle, June 2002. IEEE.

W. Bakalski, W. Simbürger, D.Kehrer, H.D.Wohlmuth, M. Rest, and A.L. Scholtz, “A Monolithic 2.45 GHZ, 0.56 W Power Amplifier with 45 % PAE at 2.4 V in Standard 25 GHZ ft SI-Bipolar”, in International Symposium on Circuits And Systems, pp. 1803–1806, Phoenix, May 2002. IEEE.

W. Bakalski, W. Simbürger, D. Kehrer, H.-D. Wohlmuth, M. Rest, and A.L. Scholtz, “A monolithic 2.45 GHz, 0.56 W power amplifier with 45 % PAE at 2.4 V in standard 25 GHz fT Si-bipolar”, in Proceedings of IEEE International Symposium on Circuits and Systems, vol. 4, pp. IV–803 – IV–806, Scottsdale, Arizona, May 2002. IEEE.

M. Tiebout, H. D. Wohlmuth, and W. Simbürger, “A 1 V 1mW 51 GHz Fully Integrated VCO in Standard CMOS”, in IEEE International Solid-State Circuits Conference ISSCC 2002, pp. 238–239, San Francisco, 3-7 Feb. 2002.

W. Simbürger, W. Bakalski, D. Kehrer, H. D. Wohlmuth, M. Rest, K. Aufinger, S. Boguth, and A. L. Scholtz, “A Monolithic 5.8 GHz Power Amplifier in a 25GHz fT Silicon Bipolar Production Technology”, in European Microwave Week 2001, London, Sep. 24-28 2001. EUMW-01.

W. Simbürger, W. Bakalski, D. Kehrer, H.-D.Wohlmuth, M. Rest, K.Aufinger, S. Boguth, and A.L. Scholtz, “A monolithic 5.8 GHz silicon power amplifier in a 25 GHz fT silicon bipolar technology”, in GAAS, September 2001.

H. D. Wohlmuth and W. Simbürger, “A high IP3 RF Receiver Chip Set for Mobile Radio Base Stations up to 2 GHz”, IEEE Journal of Solid-State Circuits, vol. 36, pp. 1132–7, July 2001.

D. Kehrer, W. Simbürger, H. D. Wohlmuth, and A. L. Scholtz, “Modeling of Monolithic Lumped Planar Transformers up to 20 GHz”, in IEEE Custom Integrated Circuits Conference CICC 2001, pp. 401–404, San Diego, 6-9 May 2001. IEEE.

W. Simbürger, D. Kehrer, A. Heinz, H. D. Wohlmuth, M. Rest, K. Aufinger, and A. L. Scholtz, “Monolithic Transformer-Coupled RF Power Amplifiers in Si-Bipolar”, in 10th Workshop on Advances in Analog Circuit Design AACD2001, pp. 322–341, Noordwijk, The Netherlands, Apr. 24-26 2001.

W. Simbürger, D.Kehrer, A. Heinz, and H.D.Wohlmuth, Monolithic Transformer-Coupled RF Power Amplifiers in SI-Bipolar, Kluwer Academic Publishers, Nordwijk, April 2001.

W. Simbürger et al., “Spitzenwerte bei integrierten Hochfrequenzschaltungen”, ntz Informationstechnik und Telekommunikation, vol. 53, pp. 62–64, Dez. 2000.

H. D. Wohlmuth and W. Simbürger, “A high IP3 RF Receiver Chip Set for Mobile Radio Base Stations up to 2 GHz”, in ESSCIRC 2000, 26th Europ. Solid-State Circuits Conf., Proc., pp. 352–355, Stockholm, Sept. 19-21 2000.

A. Heinz, W. Simbürger, H.D.Wohlmuth, P.Weger, W. Wilhelm, R. Gabl, and K. Aufinger, “A Monolithic 2.8 V, 3.2 W Silicon Bipolar Power Amplifier with 54% PAE at 900 MHz”, in IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers, pp. 117–120, Boston, June 2000. IEEE.

W. Simbürger, A. Heinz, H.D.Wohlmuth, J. Böck, K. Aufinger, and M. Rest, “A Monolithic 2.5 V, 1 W Silicon Bipolar Power Amplifier with 55 % PAE at 1.9 GHz”, in IEEE MTT-S International Microwave Symposium Digest, pp. 853–856, Boston, June 2000. IEEE.

W. Simbürger, H. D. Wohlmuth, P. Weger, and A. Heinz, “A Monolithic Transformer Coupled 5 W Silicon Power Amplifier with 59 % PAE at 0.9 GHz”, IEEE Journal of Solid-State Circuits, vol. 34, pp. 1881–1892, December 1999.

J. Böck, H. Knapp, W. Simbürger, M. Wurzer, K. Aufinger, T. F. Meister, and L. Treitinger, “Silicon Bipolar Technologies for Mobile Communications”, Elektrotechnik und Informationstechnik, vol. 116, pp. 533–537, October 1999.

W. Simbürger, H. D. Wohlmuth, A. Heinz, M. Tiebout, and T. Liebermann, “Monolithic Integration of Power Amplifiers in Silicon-based Technologies”, in EuMC/GaAs Joint Workshop “Silicon & SiGe Technologies and Circuits”, pp. 35–47, Munich, Germany, Oct. 4-8 1999. European Microwave Week EuMW 99.

H. D. Wohlmuth, W. Simbürger, H. Knapp, and A. L. Scholtz, “2 GHz Meissner VCO in Si Bipolar Technology”, in 29th European Microwave Conference, vol. 1, pp. 190–193, Munich, October 1999.

W. Simbürger, H. D. Wohlmuth, and P. Weger, “A Monolithic 3.7 W Silicon Power Amplifier with 59 % PAE at 0.9 GHz”, in IEEE International Solid-State Circuits Conference, pp. 230–231, San Francisco, 15-17 Feb 1999. IEEE.

H. P. Trost, W. Simbürger, H. D. Wohlmuth, H. Knapp, P. Weger, and A. L. Scholtz, “1.6 Watt 1.9 GHz Power Amplifier MMIC in Silicon”, in IEE Colloquium on RF and Microwave Circuits for Commercial Wireless Applications, pp. 4/1–4/5, London, 13 Feb 1997. IEEE.

H. D. Wohlmuth, P. Weger, H. P. Trost, W. Simbürger, H. Knapp, and A. Scholtz, “Monolithisch integrierte Induktivitäten auf Silizium für Mobilfunkanwendungen”, in ITG Tagung, ETH Zürich, Oktober 1996.

W. Simbürger, H. P. Trost, H. D. Wohlmuth, H. Knapp, P. Weger, and A. L. Scholtz, “1.3W 1.9 GHz, 1W 2.4 GHz Power Amplifier MMIC in Silicon”, Electronics Letters, vol. 32, pp. 1827–1829, 12 Sept. 1996.

L. Treitinger, P. Weger, K. Aufinger, A. Felder, J. Böck, S. Boguth, R. Köpl, M. Molzer, M. Rest, H. Knapp, W. Simbürger, R. Schreiter, J. Popp, and T. Meister, “Advanced Silicon Bipolar Technologies for RF Applications”, in Microwaves and RF Conference Proceedings, p. 92, London, 10-12 Oct 1995. IEEE.

W. Simbürger, H. Knapp, and P. Weger, “Characterization of a microwave silicon single-chip direct conversion RF transceiver”, in Proceedings of the 25th European Microwave Conference, pp. 646–657, Bologna, Sept. 4-7 1995.

L. Treitinger, T. Meister, A. Felder, J. Böck, W. Molzer, K. Aufinger, R. Köpl, R. Schreiter, S. Popp, S. Boguth, M. Ohnemus, M. Rest, F. Schumann, W. Simbürger, H. Knapp, M. Wurzer, P. Weger, H. M. Rein, H. Möller, H. Melchior, and J. Wieland, “High-Speed Switching Electronics and Interconnects in Silicon and Si/SiGe Bipolar Technologies: Status and Perspectives”, in 21st European Conference on Optical Communication, p. 189, Brussels, Belgium, 17-21 Sep 1995. ECOC.

E. Bonek, G. Schultes, P. Kreuzgruber, W. Simbürger, P. Weger, T. Leslie, J. Popp, H. Knapp, and N. Rohringer, “Personal Communications Transceiver Architectures for Monolithic Integration”, in Proceedings of the IEEE International Symposium on Personal, Indoor and Mobile Radio Communications, pp. 363–368, The Hague, The Netherlandes, 19-23 Sept. 1994. IEEE, invited paper.

G. Schultes, M. Schubert, H. Krottendorfer, H. Novak, W. Simbürger, H. Reichl, and P. Kreuzgruber, “Feasibility Study Integrated DECT Transceiver”, Study under contract of Austria Mikro Systeme International A.G., Volume I-V, Institut für Nachrichtentechnik und Hochfrequenztechnik, TU Wien, Gusshausstrasse 25/389, A-1040 Wien, Austria, July 30th 1994.

P. Weger, W. Simbürger, H. Knapp, T. C. Leslie, N. Rohringer, J. Popp, G. Schultes, A. L. Scholtz, and L. Treitinger, “Completely Integrated 1.5 GHz Direct Conversion Transceiver”, in Proceedings of the 1994 Symposium on VLSI Circuits, pp. 135–136, Hawaii, USA, June 09-11 1994. IEEE.

W. Simbürger, G. Schultes, H. Novak, N. Rohringer, H. Egger, and A. L. Scholtz, “ESPRIT III Project 6135 “MIDAS” / FFF Projekt Nr. 2/303″, Second annual report, Institut für Nachrichtentechnik und Hochfrequenztechnik, TU Wien, Gusshausstrasse 25/389, A-1040 Wien, Austria, May 6th 1994.

W. Simbürger, H. Knapp, G. Schultes, and A. L. Scholtz, “Comparison of Linearization Techniques for Differential Amplifiers in Integrated Circuit Design”, in Proceedings of the 7th Mediteranean Electrotechnical Conference 1994, MELECON’94, vol. 3, pp. 1222–1225, Antalya, Turkey, Apr 12-14 1994. IEEE, Vol. III.

G. Schultes, N. Rohringer, W. Simbürger, H. Novak, H. Knapp, Egger. H., R. Vretska, P. Kreuzgruber, and A. L. Scholtz, “ESPRIT III Project 6135 MIDAS, FFF-Project 2/288”, First annual report, Institut für Nachrichtentechnik und Hochfrequenztechnik, TU Wien, Gusshausstrasse 25/389, A-1040 Wien, Austria, Mar 1, 1992 – May 12, 1993.

G. Schultes, A. L. Scholtz, M. Happl, and W. Simbürger, “A Testbed for DECT Physical- and Medium Access Layer”, in Proceedings of the Third IEEE International Symposium on Personal, Indoor and Mobile Radio Communications, pp. 349–356, Boston Massachusetts, USA, Oct 19-21 1992. IEEE.

G. Schultes, N. Rohringer, H. Knapp, R. Gahleitner, P. Kreuzgruber, W. Simbürger, and A. L. Scholtz, “ESPRIT II Project 2016 “TIP BASE” / FFF Projekt 2/284″, Final report, Institut für Nachrichtentechnik und Hochfrequenztechnik, TU Wien, Gusshausstrasse 25/389, A-1040 Wien, Austria, Sept. 30th 1992.

G. Schultes, H. Knapp, M. Happl, and W. Simbürger, “Measurement of Error Performance of a DECT- Link in a Controlled Time Dispersive Indoor Environment”, in EURO-COST, COST 231, TD(92) 41, Leeds, England, April 6-9 1992.

G. Schultes, W. Simbürger, H. Novak, and M. Happl, “Physical- and Medium Access- Layer DECT- Testbed”, in EURO-COST, COST 231, TD(92) 028, Vienna, Austria, January 7-9 1992.

G. Schultes, A. Hasenzagl, W. Simbürger, and H. Egger, “Performance of a Self Synchronizing Direct Conversion DECT Receiver”, in EURO-COST, COST 231, TD(91) 015, Florence, Italy, January 22 1991.

G. Schultes, R. Gahleitner, and W. Simbürger, “Schnurlostelefon / Homodynempfang 2. Halbjahr”, Zwischenbericht an Siemens AG Österreich, Institut für Nachrichtentechnik und Hochfrequenztechnik, TU Wien, Gusshausstrasse 25/389, A-1040 Wien, Austria, October 4th 1989.